JPS6041235A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Seiko Epson Corp
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Filing: 1983-08-15
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Granted: —
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Expires: 2003-08-15
Abstract
Abstract PURPOSE:To form an external connection terminal (bump) having high density and large strength by performing selectively plating steps several times by using a photoresist. CONSTITUTION:A photoresist is coated on a semiconductor substrate 1 in which the formation of an active region is finished, and a hole B is opened by a photoetching step. Then, a bump 4-1 is formed by plating. Thereafter, a photoresist is again coated, the top of the bump 4-1 is partly opened, and again plated to form a bump 4-2. Thus, the bump is microminiaturized while preventing the strength of the bump from decreasing.
Inventors
- 👤 Yasumasa Otsuki
- 👤 大月 康正
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 12:03
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/251
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