Formation of deposited film

Abstract

Abstract PURPOSE:To improve mass productivity by introducing respectively a precursor which is used as a raw material for forming a deposited film to be formed in a decomposing space and an active seed which is used in the decomposing space and interacts with the precursor into the depositing space for forming the deposited film on a substrate. CONSTITUTION:The characteristic of the film to be formed by decomposition of an active seed is maintained in the decomposing space for forming the deposited film to improve the rate of deposition. More specifically, an Al cylinder 15 is suspended in a depositing space (A) 1, Si particles are packed in a decomposing space (B) 2 and are heated to, for example, 1,100 deg.C to melt Si, SiF4 is blown therein to form the active seed of SiF2 and said seed is introduced into a blow- off pipe 13. On the other hand, SiH4 and H2 are introduced into a decomposing space (C) 3 and are heated to, for example, 600 deg.C to form the active seed of SiH2, SiH, etc. which is introduced into a blow-off pipe 14. The Al cylinder in the space A is heated to, for example, 300 deg.C and is rotated. A photoconductive layer 103 is thus formed and similarly an intermediate layer 102 and a surface layer 104 are formed as well. The mass production in the formation of the deposited film is thus accomplished.

Inventors

• 👤 Masaaki Hirooka
• 👤 広岡　政昭
• 👤 Kyosuke Ogawa
• 👤 小川　恭介
• 👤 Shunichi Ishihara
• 👤 俊一 石原
• 👤 Isamu Shimizu
• 👤 勇 清水

Bibliographic Details