Electrophotographic sensitive body

Abstract

Abstract PURPOSE:To enhance potential acceptance of a thin film by forming an amorphous semiconductor film made of a specified compd. contg. H and/or F as a photosensitive layer. CONSTITUTION:A thin amorphous semiconductor film used for a photosensitive layer is represented by a-Si1-xXx:H, a-Si1-xXx:F, or a-Si1-xXx:H:F, where X is C, N, or O, and 0<=x<=1. This value (x) grdually decreases from its surface to the middle part, and gradually increases from the middle to the substrate electrode. Mixing of impurities deteriorating the mobility of carriers or the life of the film is suppressed to the min. limit to accelerate the carriers, and the band structure of the thin film in the thickness direction is gradually changed. As a result, blocking is naturally erased without especially adding a blocking structure, such as an n type a-Si layer or a p type a-Si layer, and the obtained photoconductive thin film does not remarkably hinder conduction of carriers and the potential acceptance of the thin film can be enhanced.

Inventors

• 👤 Yoshihisa Owada
• 👤 善久 太和田

Bibliographic Details