Reading circuit for semiconductor non-volatile memory

Abstract

Abstract PURPOSE:To take out a large output voltage variation though a variation of threshold of a non-volatile memory is small, by driving an MOS transistor TR with the sourc side of the non-volatile memory. CONSTITUTION:A P type MOSTR11 is driven by a non-volatile memory 12 whose drain is set to an earth potential; and if a floating gate electrode of the memory 12 is not electrostatically charged with electrons, a prescribed source current is flowed through a power source voltage VDD, and a corresponding read voltage Vout is outputted. Meanwhile, if the floating gate electrode is electrostatically charged, the source current is hardly flowed, and the corresponding voltage Vout is generated. Consequently, a read output where the voltage is varied greatly in accordance with electrostatic charge or non-electrostatic charge of the floating electrode corresponding to stored contents is taken out though a variation of threshold of the non-volatile memory is small, and thus, a stable read of less variation of the output voltage is performed.

Inventors

• 👤 Yutaka Hayashi
• 👤 豊 林
• 👤 Masaaki Kamiya
• 👤 昌明 神谷
• 👤 Yoshikazu Kojima
• 👤 芳和 小島
• 👤 Kojiro Tanaka
• 👤 小次郎 田中

Bibliographic Details