Formation of fine pattern

Abstract

Abstract PURPOSE:To enable easy and accurate mask alignment and to form a fine pattern by forming an intermediate layer having specified light reflectance on an under substrate and a photoresist layer on the intermediate layer. CONSTITUTION:An intermediate layer 3 showing low reflectance to light (b) of wavelengths in the photosensitive range of a photoresist and high reflectance to light (a) for mask alignment is formed on an under substrate 1 having high reflectance and difference in level, and a photoresist layer 2 is formed on the layer 3 by coating. After prebaking the layer 2, mask alignment and exposure are carried out. Thus, accurate mask alignment is enabled, and a fine pattern can be formed.

Inventors

• 👤 Kyusaku Nishioka
• 👤 西岡　久作
• 👤 Kenji Takayama
• 👤 健司 高山

Bibliographic Details