Semiconductor laser device

Abstract

Abstract PURPOSE:To obtain a laser having excellent electrical characteristics by making the band-gap of an n type GaAlAs current stopping layer smaller than that of an un-doped GaAlAs active layer on the side close by the active layer and larger than that of the active layer on the side far from the active layer when a p type GaAlAs clad layer, an n type GaAs light absorption layer and the current stopping layer are formed on the active layer. CONSTITUTION:An n type Ga0.55Al0.45As clad layer 12, an un-doped Ga0.85Al0.15 As active layer 13 and a p type Ga0.55Al0.45As clad layer 14 are laminated on an n type GaAs substrate 11 and grown in a liquid phase in an epitaxial manner, and an n type GaAs light absorption layer 15 and an n type Ga0.55Al0.45As current stopping layer 16 from which striped sections are removed are formed on the layer 14 and the layer 16 is coated with a p type Ga0.55Al0.45As coating layer 17. In the constitution, the band-gap of the current stopping layer 16 is made smaller than that of the layer 13 on the side close by the active layer 13 and larger than that of the layer 13 on the side far from the layer 13. Accordingly, the layer 16 is given independently two functions of light absorption and current constriction, and current-optical output characteristics are improved.

Inventors

• 👤 Naoto Mogi
• 👤 茂木　直人

Bibliographic Details