Semiconductor device

Abstract

Abstract PURPOSE:To facilitate the design and manufacture of a groove type element, and to equalize and stabilize element characteristics by forming the orientation flat surface a semiconductor wafer in a 100 face while the in-groove side surface of the groove type element shaped to the main surface of the wafer is constituted in either of a form parallel with or vertical to the orientation flat surface. CONSTITUTION:The main surface 1a of a wafer 1 is formed in a 100 crystal face while the surface of an orientation flat 2 shaped by notching one part of the circumference of the main surface 1a is also formed in a 100 crystal face vertical to the main surface. A large number of silicon chips are shaped, and divided into each chip through dicing. A groove 13 in a square-shaped plane is shaped to one part of an active region 12 demarcated by a field insulating film 11 in the proper depth in the main surface of a silicon substrate 10. The groove 13 is constituted so that an inner side surface 15 is made parallel with or perpendicular to the orientation flat 2. Since an inner base 14 thereof is also formed flatly, it runs parallel with the main surface 1a.

Inventors

• 👤 Makoto Ogasawara
• 👤 誠 小笠原
• 👤 Shinji Shimizu
• 👤 真二 清水

Bibliographic Details