Formation of ohmic electrode on gallium arsenide

Abstract

Abstract PURPOSE:To enable formation of an ohmic electrode on an n type gallium arsenide crystal substrate having an electrode of smooth surface without alloying which is much restricted in heat treatment conditions by using germanium added with donor impurity in forming a germanium film. CONSTITUTION:A Ge thin film 4 is coated by vacuum deposition using arsenic- doped germanium as a raw material in a region where an ohmic electrode is to be installed and then heat-treated in the atmosphere of argon gas containing arsine. In this heat treatment, the Ge thin film 4 and a GaAs substrate 1 react and heat treatment for silicon activation by ion implantation against the GaAs substrate 1 is also carried out. Then, a silicon dioxide film 5 is coated on the surface of the GaAs substrate 1 including the Ge thin film 4, a photo resist film 6 is coated on the silicon dioxide film 5 and a window 7 is formed in the region of an SiO2 film where the electrode is to be installed. By removing a Ti film on the photo resist film 6 with the photo resist film after a metal film 8, e.g., a titanium film is vacuum-deposited, a Hall element 10 remained only on the Ge thin film 4 is obtained.

Inventors

• 👤 Hiroshi Ishimura
• 👤 石村　浩
• 👤 Mitsugi Higashiura
• 👤 東浦　貢

Bibliographic Details