Solar cell

Abstract

Abstract PURPOSE:To upgrade the conversion efficiency of a solar cell by a method wherein the solar cell having a P-N junction or an MIS structure is manufactured using a compound semiconductor substrate with the (111)A plane, which has been formed with pyramidal roughnesses on the surface thereof. CONSTITUTION:A P type InP single crystal with the (111)A plane is used as a substrate 6 and an etching treatment is performed on the substrate 6 with Br (1-2%) methanol solution for forming pyramidal roughnesses on the surface of the substrate 6. An S is performed a thermal diffusion from the rough surface as donor impurities for 3hr at 700 deg.C, and by turning the about 0.3mum deep surface layer into an N type InP layer 7, an InP solar cell having an N-P junction can be obtained. By this method, the improvement of the short-circuit current density, that is, an improvement to 33mA/cm<2> from 30mA/cm<2> obtained by the conventional method, is contrived, and as the result, the conversion efficiency is also greatly improved, rising to 14.5% from 13%, compared with the conventional method.

Inventors

• 👤 Akio Yamamoto
• 👤 山本　「あき」勇
• 👤 Zeio Kamimura
• 👤 税男 上村

Bibliographic Details