Darlington-connected type transistor

Abstract

Abstract PURPOSE:To prevent the generation of a leakage current as well as to increase the current amplification factor of the former stage transistor by a method wherein the base of the first half stage transistor and the base of the second half stage transistor constituting Darlington-connection are separated. CONSTITUTION:The Darlington transistor is composed of a semiconductor substrate 1, an n<-> type high resistant layer 2, an n<+> type collector layer 3, the p type base 4 of the former stage transistor (a), the base 5 of the latter stage transistor (b), an n type former stage emitter 6, an n type latter stage emitter 7, a latter stage base electrode 9, a first half stage emitter electrode 10, a latter stage base electrode 11, and a collector electrode 13 which is made common to a second half stage emitter electrode 12. Each edge of the junction J1 located between the first half stage base 4 and the n type high resistant layer 2 and the junction J2 located between the second half stage base 5 and the n type high resistant layer 2, is exposed on the main surface of the substrate 1 independently, and the first half stage base 4 and the second half stage base 5 are isolated by an isolation region (c). Also, said isolation region (c) is constituted by a speed-up diode using an n type region 14 and a p type region 15.

Inventors

• 👤 Shizuo Karasawa
• 👤 唐澤　鎭男
• 👤 Futoshi Tokuno
• 👤 徳能　太

Bibliographic Details