Semiconductor device and manufacture of the same

Abstract

Abstract PURPOSE:To improve a resolution and prevent a wiring electrode from a step-cut by a method wherein an insulating layer is formed on a wiring layer provided on a substrate and a stepped contact hole is formed in the insulating layer and a wiring electrode is formed on it. CONSTITUTION:A wiring layer 11 and an insulating film 13 are formed on a substrate 12 and a mask 15 is formed on the insulating film 13. The film 13 is etched to a prescribed thickness and a film 17 is formed on the whole surface and a film 17' is left on an inside wall of an aperture 16 in the film 13 by etching. An aperture 18 is formed by etching the film 13 using the film 17' as a mask. With this process, a stepped contact hole 19 is formed in the film 13. Then the mask 15 and the film 17' are removed. A wiring electrode 20 connected to the layer 11 through the conatct hole 19 is formed.

Inventors

• 👤 Kunihiro Mori
• 👤 森　邦弘
• 👤 Katsuya Okumura
• 👤 勝弥 奥村

Bibliographic Details