Crystal growth method of mgo-al2o3 film

Abstract

Abstract PURPOSE:To control each speed of Al and Mg atoms independently by separately using an aluminum organic compound and a magnesium organic compound as supply sources for Al atoms and Mg atoms. CONSTITUTION:The molecules of an aluminum organic compound and the molecules of a magnesium organic compound fed into a region B are thermally decomposed in the vicinity of a silicon wafer 15, and each changed into metallic aluminum and metallic magnesium, and these metallic aluminum and magnesium react with O2 gas separately flowed in a reaction furnace 11 while using H2 gas as a carrier gas and are turned into MgO and Al2O3, and an MgO.Al2O3 crystal, a mol ratio thereof is controlled, is grown on the surface of the silicon wafer 15 in an epitaxial manner. Trimethyl aluminum, triethyl aluminum or the like is used as the aluminum organic compound and a magnesiumalkyl compound, such as dimethyl magnesium, diethyl magnesium, etc., dicyclopentadienyl magnesium, diphenyl magnesium-ethylate-aduct or the like as the magnesium organic compound respectively.

Inventors

• 👤 Katsunobu Maeda
• 👤 克宣 前田

Bibliographic Details