Manufacture of semiconductor laser

Abstract

Abstract PURPOSE:To obtain a structure having good current narrowing layer in one crystal growth by etching the terrace oblique surface of an InP substrate of (100) plane azimuth to form a (211) surface, and liquid phase epitaxially growing InP in reverse conductive type to the substrate. CONSTITUTION:An N type InP substrate 1 of (100) plane azimuth is etched with etchant of chlorine series to form an oblique surface A in (211) surface, the degree of overcooling is set to 10 deg.C or lower to liquid-phase epitaxially grow a P type InP current narrowing layer 2. Then, a discontinuous part 2a is partly obtained in the layer 2, and operates as a window of the current. The degree of overcooling is increased, N type InP clad layer 3 is grown, and an InGaAsP active layer 4, a P type InP clad layer, cap layer 6 are sequentially grown. The current narrowing layer can be formed in one crystal growth, and large steps can be simplified. This can be utilized for manufacturing a long wavelength InGaAsP/InP semiconductor laser for a light communication.

Inventors

• 👤 Koichi Imanaka
• 👤 今仲　行一
• 👤 Hideaki Horikawa
• 👤 英明 堀川
• 👤 Akira Watanabe
• 👤 彰 渡辺
• 👤 Tomoyuki Yamada
• 👤 山田　朋幸

Bibliographic Details