Non-volatile random access memory device

Abstract

Abstract PURPOSE:To reduce the size of a non-volatile RAM formed by volatile and non- volatile memory cells by using only one capacitor through two pairs of power supplies for supplying high voltages at different timing. CONSTITUTION:When the power supplies VH1, VH2 for supplying voltages to the non-volatile memory cell 3 are set up to high potential and earth potential respectively, a node FG is positively charged through a tunnel capacitor TC11. When the power supplies VH1, VH2 are turned to earth potential and high potential respectively, a gate FG11 is positively or negatively charged through the capacitor TC11 and a TRT14 to be actuated in accordance with the stored contents of the volatile memory cell 1 on the basis of the stored contents, so that the information is transferred from the cell 1 to the cell 3. Information transfer from the cell 3 to the cell 1 is executed through a recall TRT15. In said constitution, only one tunnel effect capacitor is used as the capacitor of a circuit element using the tunnel effect, and since plural large capacity capacitors are not unnecessary, the non-volatile RAM can be reduced at its size.

Inventors

• 👤 Hideki Arakawa
• 👤 秀貴 荒川

Bibliographic Details