Semiconductor laser diode

Abstract

Abstract PURPOSE:To obtain a crystal structure of a laser diode element which can increase its output without loss of the substrate properties of the laser diode by concentrating the applied current only at the active stripe. CONSTITUTION:A clad layer 12 and a flat raised guide layer 13 bent by a groove, formed of an N type AlGaAs are arranged on an N type GaAs substrate 11 formed with a groove 91 in the prescribed size at the position for disposing a cavity. Further, an active layer 15 formed of AlGaAs, a clad layer 15 formed of P type AlGaAs, and a cap layer 16 formed of P type GaAs are arranged to expose the surface of a guide layer 13 by forming grooves at the end and both sides of active stripes 92. 2-layer block layers 117, 127 made of P and N type AlGaAs and a cap layer 137 made of P type GaAs are arranged to cover the layers 13-16. When only the active strip 92 of the center is electrically connected, the light emitted from the layer 14 of the strip 92 is propagated through the guide layer, and is guided to the end, i.e., the reflecting surface of the element crystal chip.

Inventors

• 👤 Soichiro Yamashita
• 👤 山下　總一郎

Bibliographic Details