Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To contrive the improvement in yield by enabling the remake of the second wiring layer by a method wherein a material of larger etching rate than the material of the first wiring layer is used for the second wiring layer formed on the first wiring layer formed on a semiconductor substrate via first insulation film. CONSTITUTION:An SiO2 film 12 as the first insulation film is formed on the Si substrate 11 by the CVD method, and a polycrystalline Si layer reduced in resistance is formed thereon e.g. by phosphorus diffusion. The first wiring layer 13 made of polycrystalline Si is formed by patterning. Next, a plasma SiO2 film 14 as the second insulation film is formed over the whole surface including this first wiring layer 13, a contact hole 15 is formed by selectively opening the film 14 at the part corresponding to part of the wiring layer 13. Further, Al-Si is evaporated over the entire surface and then patterned, resulting in the formation of the second wiring layer 16 made of Al-Si connected to the wiring layer 13 via contact hole 15. The wiring layers 13 and 16 are formed respectively by using Al- Si of etching rate larger than polycrystalline Si as the material of the second wiring layer 16.

Inventors

• 👤 Junichi Ono
• 👤 淳一 大野

Bibliographic Details