Forming process of photoresist pattern

Abstract

Abstract PURPOSE:To form a minute pattern easily by a method wherein a deep type resist pattern is selectively formed as the first layer while positive resist pattern is selectively formed as the second layer on the first layer. CONSTITUTION:A deep type resist 2 as the first layer is formed and then pattern-exposed for development using a mask to produce a specific patterned photoresist. At this time, the resist 2 is formed into a resist pattern size e.g. exceeding double size of contact hole finally required. Firstly a positive resist 3 is formed on the deep type resist 2 as the first layer. Secondly the deep type resist 2 as the first layer is positioned and exposed for development so that a contact hole on the positive resist 3 as the second layer may be opened on the central part of a contact hole formed of the deep type resist 2 as the first layer. Through these procedures, the deep type resist 2 as the first layer may be formed into the film thickness so that the resist 2 may sufficiently protect various step differences if any on a semiconductor substrate.

Inventors

• 👤 Kenzo Yamazaki
• 👤 山崎　健三

Bibliographic Details