Growing method of gallium nitride

Abstract

Abstract PURPOSE:To obtain a grown layer which has good surface flatness and crystallinity by performing the step of forming GaN on a crystalline substrate by the first step of executing in an inert atmosphere and the second step of performing in a hydrogen atmosphere. CONSTITUTION:The step of forming GaN on a crystalline substrate 4 is performed by the reaction of organic gallium compound with ammonia. In this case, the step is performed by the first step of executing in an inert atmosphere and the second step of performing in a hydrogen atmosphere. Organic gallium compound is selected from trimethyl gallium or triethyl gallium. Thus, a colorless, transparent, smooth-surface GaN crystalline layer is obtained on the substrate 4.

Inventors

• 👤 Toshiharu Kawabata
• 👤 川端　敏治
• 👤 Susumu Furuike
• 👤 進 古池
• 👤 Toshio Matsuda
• 👤 俊夫 松田

Bibliographic Details