Capacitor element

Abstract

Abstract PURPOSE:To lower the value of equivalent series-connected resistance, by imparting a bias voltage to an epitaxial layer so that at least one of a part between a P<+> layer, which is formed at the bottom of an N<+> layer and the N<+> laye or a part between the P<+> layer and the epitaxial layer. CONSTITUTION:An electrode 5b is connected to an N<+> layer 3 and a P<+> layer 9. An electrode 10 is connected to an epitaxial layer 2 through an N<+> layer 11 for contact. A bias voltage VCC is imparted to the electrode 10 so that a part between the layers 9 and 2 becomes a cutoff state. Desired capacity C1 is obtained between electrodes 5a and 5b. The layers 3 and 9 have the same structure as that between the base and emitter of an NPN transistor. It is equivalent that a resistor R having very high resistance value is connected to the capacitor C2 in series owing to the pinch-off effect of the base layer. Therefore, the attenuation of a transmitted signal is negligible.

Inventors

• 👤 Junichi Hikita
• 👤 純一 疋田
• 👤 Shigeyoshi Hayashi
• 👤 林　成嘉

Bibliographic Details