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JPS60165745A Expired / Lapsed JP ⏱️ 0.0 years remaining

Resin-sealed semiconductor device

Assignee: Toshiba Corp
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Filing: 1984-02-09
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Granted: —
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Expires: 2004-02-09
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Abstract

Abstract PURPOSE:To reduce the cost of a semiconductor device and to avoid a crack of a resin by forming a structure that aluminum is used for a heat sink and a copper layer is formed at the side of mounting an element when the heat sink is bonded on one surface of a heat sink plate, a semiconductor element is mounted here and the element and the sink are molded with resin. CONSTITUTION:When a heat sink 11 is bonded to one flat surface of a heat sink plate 10, a sink substrate 11a is formed of an aluminum, an Al2O3 layer 11c is provided at the plate 10 side, and a Cu layer 11b is provided at the side of securing a power IC element 2. Then, a solder layer 6 is used at the side of the layer 11b, an IC element is secured, and wiring electrodes provided at the element are connected via fine metal wirings 3 with a lead 4a having a solder coating layer 12 at the projection. Thereafter, the element 2, the inner end side of the lead 4a and the sink 11 are surrounded by an enclosure 5 made of molding resin. Thus, the cost of a semiconductor device is reduced, and the weight of the device is decreased.

Inventors

  • 👤 Yoshimasa Kudo
  • 👤 工藤 好正

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-03 19:51
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W40/00; H10W40/20; H10W40/22; H10W72/00; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/756

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5236980A Cited

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