Vapor growth apparatus

Abstract

Abstract PURPOSE:To realize preprocessing of vapor growth process at a low temperature and avoid generation of thermal stress dislocation by intermittently irradiating the surface of base material with electromagnetic wave on the occasion of obtaining a growth layer by placing the base material to be processed in the reaction reservior. CONSTITUTION:A large diameter silicon base material 3 supported by a heating pedestal 2 is accommodated in a quartz reaction reservior 1 and the heating pedestal 2 heats such silicon base material with a high frequency coil 5 provided at the rear side thereof. The heating pedestal 2 is also rotated by the rotating axis 4, the hydrogen gas as the carrier gas is supplied to the reaction reservior 1 from the gas supply nozzle 6 which runs through the heating pedestal 2, and after the surface of base material 3 is purified, the gas is exhausted from the exhaust port 7. With such a structure, an intermittent lamp 81 which is used as the flash lamp is disposed at the external upper part of reservior 1 and the base material 3 is irradiated with the light having strong energy through the irradiation lens 82. Simultaneously, the heating pedestal 2 is also heated, temperature of base material 3 is set to about 950 deg.C which is lower than oridnary temperature and sufficient preprocessing is carried out even under such temperature.

Inventors

• 👤 Hironori Inoue
• 👤 洋典 井上
• 👤 Takaya Suzuki
• 👤 誉也 鈴木
• 👤 Yutaka Kobayashi
• 👤 裕 小林

Bibliographic Details