Semiconductor light emitting device

Abstract

Abstract PURPOSE:To form the active layer even and to generate the output light with a stable mode by arranging the stripe-form groove where (111) plane of the second semiconductor layer and (100) plane of the first semiconductor layer are exposed and the double hetero structure. CONSTITUTION:On the N type InP substrate 11, an N type InGaAsP layer 12 and a P type InP layer 13 are grown. On the InP layer 13, a mask is formed by using SiO2 followed by selective etching of the P type InP layer 13 to form the groove 14 whose cross section is an inverted trapezoid. In the groove 14, an N type InP second clad layer 17 are LPE-grown in order and on the InP second clad layer 17, a P type InGaAsP contact layer 18 is LPE-grown. On this semiconductor substrate, a protective insulating film 19, a P-side electrode 20 and an N-side electrode 21 are formed followed by cleavage and etc. to form the semiconductor light emitting element.

Inventors

• 👤 Yorimitsu Nishitani
• 👤 西谷　頼光

Bibliographic Details