Manufacture of semiconductor thin film crystal layer

Abstract

Abstract PURPOSE:To suppress generation of a crystal defect, etc. to be caused by existence of the step difference of an insulating layer at manufacture of a semiconductor thin film crystal layer by a method wherein flattening of the surface is contrived by burying a single crystal in an opening part previously before the semiconductor thin film crystal layer is to be manufactured. CONSTITUTION:A single crystal Si substrate 21 is thermally oxidized to form an SiO2 film 22 on the substrate 21. A part of the SiO2 film 22 is etched in succession to form an opening part 23. Then an amorphous Si film is evaporated to form a single crystal Si film 24 and the amorphous Si film 25. Then, when the sample is immersed in the HF, HNO3, CH3COOH liquid to etch only the amorphous film, and hardly to etch the single crystal Si film, the opening part 23 is buried with the single crystal Si film 24, and the surface of the sample is nearly flattened. Then, when beam annealing is performed using a continuously scanning type electron beam, fusion-recrystallization of Si is generated smoothly to obtain a single crystal thin film 28.

Inventors

• 👤 Toshio Yoshii
• 👤 俊夫 吉井

Bibliographic Details