Electrode structure of thin film transistor

Abstract

Abstract PURPOSE:To obtain a stabilized and high heat-resisting thin film transistor to be used for driving of a liquid crystal image indication device and the like, the characteristics of which will be unchanged even when a heat treatment is performed at 300 deg.C or thereabout after formation of the thin film transistor. CONSTITUTION:The N<+> amorphous silicon 23, which forms the base of a source and drain electrode located on an N<-> amorphous silicon 21, and the Al 22 which is electrode material are isolated by a high melting point metal 24, desirably such as Cr, Ta, W and the like, and they are not directly contacted with each other. Besides, 25 shown in the diagram is a gate electrode and 26 is an insulating film. As a result, these high melting point metals effectively function as a barrier layer which prevents Al from penetrating an N<+> amorphous silicon layer when a heat treatment is performed at 300 deg.C or thereabout in the manufacturing process of an image indication device to be conducted after formation of the thin film transistor.

Inventors

• 👤 Hiroshi Ogura
• 👤 弘 小倉
• 👤 「くぬぎ」田　昌也
• 👤 Masaya Keyakida

Bibliographic Details