Level shift circuit of complementary insulated gate field effect transistor

Abstract

Abstract PURPOSE:To decrease the peak value of a current consumption by increasing the absolute value of a threshold voltage of the 1st and 2nd isolation gate field effect transistors (TRs) more than the absolute value of the threshold voltage of the 3rd and 4th field effect TRs. CONSTITUTION:When the threshold value VTN' of N-channel MOSFETQn1, Qn2 is increased more than a threshold value VTP of P-channel MOSFETQp3, Qp4, since the on-resistance is increased with the increased threshold value of the Qn1, the through-current ID flowing with the Qn1, Qn3 turned on is decreased. Since the potential a contact point 1 depends on the on-resistance ratio of the Qn1, Qn3, it is increased and the on-state of the Qn2 is obtained with a power supply voltage higher (with less absolute value) than that of a conventional example. Then the circuit is activated with a power supply voltage higher than the conventional example. In Fig., the through-current ID is shown with VTP=-0.7 (V) and VTN'=0.7, 1.2, 1.4V. When the VTN' is higher than the VTP, the through- current ID is decreased in response to the degree, and the peak value of the through-current ID is decreased to around 1/10 of the conventional circuit even with VTN'=1.2(V), for example.

Inventors

• 👤 Akihiko Koga
• 👤 古賀　昭彦

Bibliographic Details