Semiconductor memory device

Abstract

Abstract PURPOSE:To prevent the generation of malfunction based on capacitive coupling by a method wherein static shield plates are inserted between electrodes or wirings provided in opposition to each other. CONSTITUTION:In the region where common data buses D and D<-> are present, a polycrystalline Si layer connection line 18 connecting a column switch driver Q5 to column switches Q6 and Q7 elongates left and right on an Si layer 20 via field insulation film 21, and the static shield plate 16 is provided thereon via interlayer insulation film 22. Common data buses phi1 and phi2 elongate vertically to the space of the figure again via interlayer insulation film 23, and the line 18 is statically shielded from the common data buses phi1 and phi2. This manner enables the prevention of the generation of malfunction based on capacitive coupling in the titled device of multilayer structure performing dynamic action.

Inventors

• 👤 Masao Taguchi
• 👤 眞男 田口

Bibliographic Details