Semiconductor memory

Abstract

Abstract PURPOSE:To attain read of a memory cell output with high sensitivity and differential read with ease of design by detecting differentially a signal of a memory cell selected by a word selection signal and a signal of a dummy cell. CONSTITUTION:When the information of a memory cell M00 is ''0'', digit sense lines D0, D remain at high level, then a line DS is discharged toward a low level. When a set signal SET is impressed to a sense amplifier SA at the moment when the level reaches a proper level, the digit sense line DS is discharged to a low level in high speed. The digit sense lines D0, D are kept nearly to a high level voltage at that time. When the memory cell M00 is logical ''1'', the digit sense line D0, D go to a low level with the set signal SET impressed and the digit sense line DS is kept to a high level. Thus, the line D is kept to a voltage level in response to the information in high speed by the storage information of the memory cell M00.

Inventors

• 👤 Kiyoo Ito
• 👤 清男 伊藤
• 👤 Yukinobu Chiba
• 👤 千葉　幸悦
• 👤 Katsuhiro Shimohigashi
• 👤 下東　勝博

Bibliographic Details