Manufacture of complementary metal insulator semiconductor device

Abstract

Abstract PURPOSE:To enable a narrower and deep isolation region of an insulator to be formed easily, by selectively forming a recess having sheer side walls, providing the insulator selectively on the side walls and thereafter growing single crystal semiconductor within the recess. CONSTITUTION:A recess 4 when formed by an anisotropic etching process has approximately vertical side walls 4a. A silicon wafer with such a recess is provided with an insulator layer 5 of SiO2 covering all over the surface including the sheer side walls 4a. The surface is then processed by reactive ion etching so that the insulator 5 is selectively left only on the side walls 4a while the silicon is exposed only on the bottom of the recess 4. Single crystal silicon is grown within the recess 4 and doped with B so as to form a P type well 7. In N type regions inside and outside the well 7, MOSFET's 12 and 13 with P channels are completed, respectively. The well 7 is surrounded by narrow and deep isolation region 14 consisting of the insulator 5.

Inventors

• 👤 Kazuo Nojiri
• 👤 野尻　一男
• 👤 Satoshi Meguro
• 👤 目黒　怜
• 👤 Katsuhiko Ito
• 👤 勝彦 伊藤
• 👤 Kazuyuki Tsukuni
• 👤 和之 津国

Bibliographic Details