Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To realize multilayered wirings having high reliability without disconnection with a low interlayer contact resistance by setting reaction chamber pressure lower than vapor pressure of halogenide on the occasion of selectively allowing a metal film to grow by the vapor growth method within the through holes. CONSTITUTION:The Al film or wiring (Al wiring) 23 consisting of an alloy film mainly consisting of Al is formed as the first layer on a Si substrate 21 forming elements through an insulation film 22. An insulation film 25 is deposited to the entire part and the through holes 26 for connecting wirings are formed to the desired position of insulation film 25 by the photo etching method. Next, a W film 27 is deposited within the through holes 26 by the vapor growth method utilizing, for example, the WF6 gas and H2 gas. As the conditions for depositing W film 27, a substrate temperature is 250-400 deg.C, reaction chamber pressure is 1X10<-2> Torr or less, while the divided pressure of WF6 is 1X10<-4>-5X10<-2>Torr. Next, a second Al wiring 28 to be connected to the first Al wiring 23 through the W film 27 is formed.

Inventors

• 👤 Takahiko Moriya
• 👤 守屋　孝彦
• 👤 Saburo Nakada
• 👤 中田　三郎

Bibliographic Details