Semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To prevent generation of crystal defects, etc., to contrive to improve the characteristics and attain higher speed and higher integration by forming a high resistance SiC film for the insulation and protection film of a semiconductor device. CONSTITUTION:On the main surface of an Si single crystal substrate 1 of P type 10-30OMEGA.cm resistivity, a high resistance SiC film 2 is formed in an appropriate thickness. The SiC film 2 includes BeO in the SiC as impurity and the resistivity is as high as 10<7>-10<10>OMEGA.cm so is almost an insulation material. On the main surface of the Si substrate 1 exposed by selectively removing the SiC film 2 by etching, a buried layer 3 is formed by doping phosphorus, etc., on which an N type epitaxial layer 4 is formed by epitaxial growth. Then, a bipolar transistor QB is constituted with the epitaxial layer 4 as a collector C, a P type layer 4 as a base B and an N<+> layer as an emitter E by selectively doping impurity of N type and P type on the main surface of the epitaxial layer 4.

Inventors

• 👤 Masataka Nomura
• 👤 野村　正敬
• 👤 Hideo Noda
• 👤 野田　秀男

Bibliographic Details