Semiconductor device

Abstract

Abstract PURPOSE:To inject holes of high speed to a base, and to shorten the transient time of a small number of carriers by forming spiky barriers to a valence band in an emitter-base junction section and passing the barriers through holes, mobility thereof is originally low. CONSTITUTION:A first layer p type InGaAs layer 7 is formed on an InP p<+> substrate 6, and an n type InGaAs layer 8 is formed on the p type -InGaAs layer and a p type InP layer 9 further on the layer 8. AuGe/Au electrodes 11, 12 as base electrodes are formed on the second layer n-InGaAs layer 8 through etchings 9a, 9b up to the second layer n type InGaAs layer while leaving an emitter region in the third layer InP layer. Ohmic contacts are formed through alloyings to form bases, Au/Zn/Au electrodes 10, 13 are shaped to the third layer p type InP layer 9 and the back of a p<+> type InP 6, and emitter and collector electrodes are formed through the making of ohmics. Accordingly, a p-n-p hetero- junction bipolar transistor is formed.

Inventors

• 👤 Naoki Yokoyama
• 👤 直樹 横山

Bibliographic Details