Semiconductor memory

Abstract

Abstract PURPOSE:To reduce the occurrence of an improper memory volatilization due to defective manufacture in a semiconductor memory having a floating gate by forming the gate through an insulating film in a double structure. CONSTITUTION:The floating gate 2 of a semiconductor memory having a control gate 1, a floating gate 2, a channel section 3, a drain 4, a source 5, a surface protective film 6, an interlayer insulating film 7, a gate oxidized film 8, a field oxidized film 9, and a silicon substrate 10 is formed in a structure that the film 11 is interposed between two layers 2a and 2b. Part of hot electrons generated by avalanche passes in the film 8 by an electric field generated by the gate 1 in the depletion layer region near the drain 4, and stored in the gates 2a, 2b. The charges stored in the both floating gates are provided to operate a transistor even solely.

Inventors

• 👤 Yukimasa Matsuda
• 👤 松田　幸正

Bibliographic Details