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JPS60106153A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device and manufacture thereof

Assignee: Toshiba Corp
•
Filing: 1983-11-15
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Granted: —
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Expires: 2003-11-15
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Abstract

Abstract PURPOSE:To produce a thinner semiconductor device with specific thickness while improving the mass productivity by a method wherein a hole is made in a film carrier and after a pellet is inserted into the hole and putting of resin, the upper surface of the hole is covered with a sealing plate to be sealed with resin so that the lower surface of the film carrier, the pellet and the resin may be made almost flush. CONSTITUTION:A pellet 2 around 200mum thick is sealed with resin 5 in a hole provided in a film carrier 8 around 350mum thick. The film carrier 8, the pellet 2 and the resin 5 are formed so that their lower surfaces may be made flush while the upper surface of the hole is covered with an insulating sealing plate 9. The bonding wires 4 connecting the pellet 4 with the upper surface of a leading part of the film carrier 8 are held down on the upper surface of said film carrier 8. Through these procedures, a semiconductor much thinner than those utilizing any conventional wires may be formed since its thickness is specified regardless of the loop height of resin and wires.

Inventors

  • 👤 Akira Kuromaru
  • 👤 黒丸 明

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 17:14
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10P72/7438; H10W70/682; H10W72/00; H10W72/01; H10W72/015; H10W72/071; H10W72/073; H10W72/075; H10W72/07502; H10W72/07504; H10W72/07507; H10W72/07551; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W74/00; H10W74/10; H10W74/131; H10W74/142; H10W90/00; H10W90/701; H10W90/751; H10W90/754; H10W99/00

Claims Analysis

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References Cited (Backward Citations)

JPS57135744U Cited

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