Field-effect transistor

Abstract

Abstract PURPOSE:To prevent the effect of a substrate on an active layer by forming a buffer layer by oxygen doped AlxGa1-xAs. CONSTITUTION:A buffer layer 2 consisting of oxygen doped Al0.5Ga0.5As is formed on a GaAs substrate 1, and an active layer 3 composed of n type GaAs is shaped on the layer 2. Source and drain electrodes 4 and a gate electrode 5 are formed on the layer 3. Oxygen doped Al0.5Ga0.5As shaping the layer 2 has high resistivity as 10<14>OMEGAcm because a level is formed at a position of 0.64eV from the end of a conduction band by oxygen. Consequently, high resistivity as 10<10>OMEGA is obtained even in film thickness such as 1mum. Accordingly, a substrate having low resistivity can be used as the substrate 1, and the deterioration of an element generated by Cr in the semi-insulating GaAs substrate can be prevented.

Inventors

• 👤 Tatsuo Otsuki
• 👤 達男 大槻
• 👤 Masaru Kazumura
• 👤 数村　勝
• 👤 Kazunari Oota
• 👤 一成 太田

Bibliographic Details