Semiconductor device

Abstract

Abstract PURPOSE:To reduce connecting resistance even when the area of a contact section is small by forming a roughened surface to a semiconductor surface in a contact hole section bored to an insulating film by fine irregularities. CONSTITUTION:A diffusion layer 12 formed to the surface of an Si substrate 11 is connected to an Si wiring 15 through a contact hole 14 bored to an oxide film 13. An irregular surface 16 is shaped to the surface of the contact hole section 14 in the wiring 15, and the surface 16 and an Al wiring 17 are connected. Accordingly, the surface area is increased even when the area of a contact section is small, and connecting resistance is reduced.

Inventors

• 👤 Seiichi Iwamatsu
• 👤 誠一 岩松

Bibliographic Details