Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To eliminate head and thereby obtain flat surface by coating the entire surface including birds' head generated at an oxide film surface with the resist film, on the occasion of isolating element regions formed on the semiconductor substrate into islands by a selective oxide film, and executing the ion etching by utilizing that the resist film is this on the heads. CONSTITUTION:An N<+> type layer 2 is formed by the epitaxial growth method on a P type Si substrate 1, a field SiO2 film 6 which enters the substrate 1 is formed by the selective oxidation and the layer 2 is isolated like an island. Next, a P type base region 3 is formed by diffusion in the layer 2 formed like island and an N<+> type emitter region 4 is then formed in such region, thereby forming a semiconductor device. In this case, according to the selective oxidation, namely LOCOS method, the birds' beak 7 and birds' head 8 are generated at the surface of film 6 and thereby the surface becomes uneven. Therefore, the ion etching of Ar, etc. is carried out to the entire part utilizing that the entire part is coated with the resist film 9 and the film 9 is thin on the head 8 in order to eliminate the head 8 and make flat the surface.

Inventors

• 👤 Takeo Yoshikawa
• 👤 吉川　武夫

Bibliographic Details