Semiconductor device

Abstract

Abstract PURPOSE:To improve the thermal stress withstanding capability of a semiconductor device composed of a flip chip and thereby to widen the scope of service of the semiconductor device by a method wherein a semiconductor chip formed into an element and a bonding substrate are electrically connected with each other with the intermediary of a unidirectionally conductive film made of composite material. CONSTITUTION:A semiconductor chip 1 and a ceramic substrate 3 are bonded together by heating or thermocompression with the intermediary of a unidirectionally conductive film 7 composed of composite material. The composite film 7 is fabricated, for example, by densly imbedding metal lines 8 of Cu, Au or Ag in insulating resin 9 in the direction of its thickness. The composite film 7 is conductive in the direction of thickness only (electrically anisotropic), is mechanically rigid in the direction of thickness and soft in the lateral direction. Thermal stress that may be present along the region of bond between the semiconductor chip 1 and the ceramic substrate 3 attributable to different thermal expansion factors is absorbed or reduced.

Inventors

• 👤 Shigeru Harada
• 👤 繁 原田

Bibliographic Details