Manufacture of glass mask for forming semiconductor

Abstract

Abstract PURPOSE:To enable efficient heating of a glass mask in a short time in prebaking and postbaking steps and deformation of a resist film pattern by irradiating IR rays from the reverse side to heat the glass mask. CONSTITUTION:The reverse side of a glass mask 1, that is, the reverse side of the glass base 2 on which a metallic film 3 is not attached is irradiated with near IR rays from a light source 5. The base 2, especially made of quartz, has high transmittance of said rays, and absorbs them not too much. The rays irradiated from the reverse side are transmitted through the base 2 and absorbed with the film 3 to selectively heat it. As a result, in prebaking and postbaking, efficient heating can be attained in a short time, resulting in sufficient baking only in 5-10min, thus permitting prevention of deformation of the pattern of the resist film 4 in the postbaking.

Inventors

• 👤 Isao Sato
• 👤 功 佐藤

Bibliographic Details