Semiconductor laser element

Abstract

Abstract PURPOSE:To obtain a semiconductor laser element of high quality by controlling carrier density of a Te-doped N type clad layer. CONSTITUTION:When Te is used as a dopant of an N type GaAlAs clad layer, the function as an effective N type clad layer can be imparted to a crystal layer which has high mixture crystal of a laser element that oscillates a visible light by setting the Te carrier density of a GaAlAs clad layer in the range of 2X10<17>-2X10<18>cm<-3> irrespective of the type of the semiconductor matrial of an active layer. In this manner, a semiconductor laser element of a low threshold current having preferable element characteristics can be obtained.

Inventors

• 👤 Takuo Takenaka
• 👤 卓夫 竹中
• 👤 Shinji Kaneiwa
• 👤 進治 兼岩
• 👤 Morichika Yano
• 👤 矢野　盛規

Bibliographic Details