Field effect transistor

Abstract

Abstract PURPOSE:To enable to perform a high speed operation by forming a V-shaped groove on a semiconductor layer and shortening the gate length. CONSTITUTION:A semiconductor layer 21 made of GaAs having small electron affinity, a semiconductor layer 22 having high specific resistance and large electron affinity as well as made of GaAs, and a semiconductor layer 23 having low specific resistance and small electron affinity as well as made of GaAs are laminated. A semiconductor layer 26 having high specific resistance and small electron affinity as well as made of AlGaAs is formed on a groove 25 which is formed on a laminate 24. A semiconductor layer 27 having low specific resistance and small electron affinity as well as made of AlGaAs is formed on the layer 26. A gate electrode 28 which is extended oppositely to the side surface which faces the groove 25 is attached onto the layer 27 to form a Schottky junction 29.

Inventors

• 👤 Kotaro Tsubaki
• 👤 光太郎 椿
• 👤 Kunishige Oe
• 👤 尾江　邦重
• 👤 Kenji Kumabe
• 👤 隈部　建治

Bibliographic Details