Semiconductor device

Abstract

Abstract PURPOSE:To prevent an electron mobility in a high electric field from decreasing in a high electron mobility transistor by increasing the difference of the electron affinity in a hetero junction between a channel layer and an electron supply layer. CONSTITUTION:A GaAs (channel) layer 12, and an AlxGa1-xAs layer which has a region 13 having no impurity and an N type region 14 are sequentially formed on a GaAs substrate 11. Si is introduced as an impurity to the region 14. Then, AuGe/Au<2> layer is deposited on the position where a source electrode 15 and a drain electrode 16 are arranged, and a resistive connection region 17 to the layer 12 is formed. Then, a gate electrode 18 is formed.

Inventors

• 👤 Tomonori Ishikawa
• 👤 石川　知則
• 👤 Sukehisa Hiyamizu
• 👤 冷水　佐寿

Bibliographic Details