Manufacture of thin film semiconductor

Abstract

Abstract PURPOSE:To obtain the amorphous silicon thin film of high photoconductivity, high dark resistivity and high growing speed by a method wherein gas ion and silicon ion which are formed by colliding accelerated electron against the mixed gas and the like of hydrogen and oxygen and a silicon simple is collided against the substrate surface. CONSTITUTION:A vacuum chamber 2 is brought into a high vacuum condition of 1X10<-5> or below, and the mixed gas of hydrogen and oxygen or hydrogen and nitrogen is introduced from a gas introducing tube 5 in such a manner that partial pressure will be brought in the range from 1X10<-5>Torr to 8X10<-4>Torr. Then, the silicon atomlike particles vaporized by an electron beam evaporation source 4 and the introduced mixed gas are ionized by performing ionization or dissociation using the high speed electron sent from an electron generator 6. On this gas ion and silicon ion, high energy is given by applying a negative DC voltage to the substrate holder 7 using a power source 11, and after an amorphous silicon thin film has been formed on the surface of the substrate 8 by making incident of said energy on the substrate, the above is treated by heat in a hydrogen plasma atmosphere.

Inventors

• 👤 Toshio Kamisaka
• 👤 上坂　外志夫
• 👤 Kazuaki Miyamoto
• 👤 和明 宮本

Bibliographic Details