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JPS59957A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Fujitsu Ltd
•
Filing: 1982-06-25
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Granted: —
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Expires: 2002-06-25
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Abstract

Abstract PURPOSE:To facilitate the writing of information and to enhance the manufacturing yield of a semiconductor device by arranging an energy beam shielding film which has an insulating film to cover fuse wirings and a hole at the top of the fuse wirings on the insulating film to cover the insulating film. CONSTITUTION:A fuse wiring type semiconductor device is formed of a silicon substrate 11, fuse wirings 2, wiring connection pads 3a, 3b, an interlayer insulating film 4, a surface protecting insulating film 7, aluminum wirings 6a, 6b and an energy beam shielding film 9. the film 9 has a high reflectivity to the energy beam. A hole 10 is formed at the top of the wirings 2 and has a side length corresponding to the cutting length of the wirings 2. The energy beam is emitted via the hole 10 formed at the film 9 to the wirings 2, thereby cutting the wirings 2.

Inventors

  • 👤 Takashi Iwai
  • 👤 崇 岩井
  • 👤 Nobuo Sasaki
  • 👤 伸夫 佐々木

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-29 16:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5775442A Cited
JPS5856355A Cited

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