Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture a semiconductor device having a via-hole with an excellent yield by simple processes without using any specific device, by passing a semiconductor material through a process of making holes not piercing through a substrate from the front surface and a process of thinning the substrate from the back surface so that the holes are opened. CONSTITUTION:An operating layer 12 is formed on the surface of a GaAs half-insulating semiconductor substrate 11, and further source electrodes 13, drain electrodes 14 and gate electrodes 15 are provided thereon. Next, patterns of photoresists 17 having openings 16 are formed at positions at which via-holes are to be formed. Through the openings 16 of these photoresists 17, the operating layer 12 and the GaAs substrate 11 are etched selectively to form holes 16' by reactive ion etching using plasma of chlorine or the like. Then, photoresists 18 each having an opening pattern covering the source electrode 18 and the hole 16' are formed. By using these photoresists 18, metal layers 19 containing Au as a main content are formed by lifting off. Thereafter the front surface side of the substrate 11 is stuck on a glass plate, and processings of lapping and etching are applied to the back surface side of the substrate so that the substrate is thinned until part of each metal layer 19 is exposed on the lower surface side of the substrate 11.

Inventors

• 👤 Mikio Tatematsu
• 👤 立松　幹雄

Bibliographic Details