Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the shortcircuit and a disconnection of wirings in a semiconductor device by burying and forming oxidized silicon used as an isolation layer in a groove formed on a semiconductor substrate with an oxidized film as a mask, thereby flattening the surface of the substrate. CONSTITUTION:An oxidized silicon (oxidized film) 1 is grown on the surface of a silicon substrate 1. After the silicon 2 is then selectively removed, with the remaining oxidized silicon 2 as a mask it is etched to form a groove 3 on the substrate 1. Subsequently, a polysilicon 4 is formed on the surface of the substrate 1 which contains the groove 3. Thereafter, the polysilicon 4 is chemically reacted by a high temperature oxidation method with an oxidized silicon 5, and the groove 3 is buried with the silicon 5. Then, the silicons 5, 2 are removed until the surface of the substrate 1 is exposed, and the silicon 5 which buries the groove 3 is allowed to remain only in the groove.

Inventors

• 👤 Fumio Sugawara
• 👤 菅原　文雄
• 👤 Kentaro Yoshioka
• 👤 献太郎 吉岡

Bibliographic Details