Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an active region pattern which has almost no conversion error for a mask pattern by forming an impurity layer shallowly on a nonactive region and deeply on the active region. CONSTITUTION:Impurity ions of the same conductive type as a substrate 1 are implanted simultaneously on a nonactive region 4 covered with a thick insulating film 2 and on an active region exposed on the surface of the substrate, thereby simultaneously forming the shallow impurity layer 8 to become a channel stopper on the nonactive region 4 and a deep impurity layer for preventing a punch through between a source and a drain on the channel region 11 of an active region 6 and particularly on an MOS transistor channel region 11. In this manner, the channel stopper impurity layer can be formed in a self-aligning manner on the active region.

Inventors

• 👤 Shuichi Oya
• 👤 大屋　秀市

Bibliographic Details