resist

Abstract

Abstract PURPOSE:To prevent deterioration in accuracy due to the refraction of electron beams by using an electrically conductive resist with low volume resistivity so as to prevent the electrification of a photomask with electron beams and that of a resist film or an oxide film during the direct processing of a wafer. CONSTITUTION:A resist with 10<0>-10<10>OMEGAcm volume resistivity is produced by adding a high-molecular molecular addition compound with great electron affinity such as halogen-tetracyanoethylene to a charge transfer type molecular addition compound such as perylene halide or a vinyl polymer having a relatively large pi electron system. A silicon wafer S having an oxide film O is coated with the electrically conductive resist R, an electrode T is attached to the resist, and processing with electron beams C is carried out. Since the resist R has electric conductivity, electrification is not caused, and patterning of high accuracy is enabled.

Inventors

• 👤 Yasuhiro Koizumi
• 👤 古泉　裕弘

Bibliographic Details