Superlattice negative resistance element

Abstract

Abstract PURPOSE:To obtain the negative resistance element with superlattice structure, through which the large degree of amplification is acquired, by flowing resonant tunnel currents through sections among a plural pair of levels and obtaining larger differential negative resistance. CONSTITUTION:The position 31 of the lower end of a conductive band changes in a sine wave shape in the direction 39 vertical to the upper surface 38 of a substrate 37. GaAs is used as a substrate mixed crystal, and a mixed crystal layer consists of Ga1-xAlxAs. The change of the sine wave shape is obtained by altering a composition ratio (x) of Al in a sine wave shape. When the shape of a potential well formed by the spatial change of the position of the lower end of the conductive band takes a sine wave, scattered energy levels 33, 34, 35, 36 are arranged at approximately regular intervals. When voltage is applied to the superlattice, regions 44 in which a field drop focuses are generated. When applied voltage is increased to a proper value, the energy levels of the left potential wells and those of the right potential wells coincide in a plurality of pairs while holding the thin-film regions 44, the resonant tunnel currents 41, 42, 43 flow through three pairs of the levels, and large differential negative resistance is obtained.

Inventors

• 👤 Tomoo Yanase
• 👤 柳瀬　知夫
• 👤 Hiroyoshi Rangu
• 👤 博義 覧具

Bibliographic Details