Semiconductor device

Abstract

Abstract PURPOSE:To disperse breakdown currents to the whole surface of a transistor, and to provide high breakdown allowable currents by properly designing the shape of the output transistor. CONSTITUTION:An output terminal 66 is connected to a drain through contact holes 62 in the whole region in the channel width direction of the output transistor by a wiring 61, resistance thereof can be ignored. A source wiring 64 is also drawn out of a ground wiring 63, and connected similarly to a source by contact holes. The contact holes are formed at fixed distances from the nose of the drain in the lower section of a gate, and arranged uniformly in the channel width direction. Consequently, RD is equally extending over the whole region of the output transistor. The channel lengths of the gate 65 are equal to the space of the base and emitter of a parasitic bipolar transistor, and are equalized because a current amplification factor is determined. The ground wiring 63 constituting RD and the contact holes are also arranged in the same manner as RD.

Inventors

• 👤 Yasutaka Yamaguchi
• 👤 山口　泰孝

Bibliographic Details