Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To perfectly prevent the generation of dregs after washing by leaving the protection oxide film without etching before growth of the LOCOS oxide film and washing and dehydrating the silicon substrate surface while it is covered with a hydrophilic silicon nitride and protection oxide film. CONSTITUTION:With a photo resist 4 where a protection oxide film 2 such as silicon dioxide is formed on a silicon substrate 1 and moreover a silicon nitride film 3 is formed on the protection oxide film 2 used as the mask, the silicon nitride film 3 is plasma-etched by the CF4 gas. Next, with the photo resist used as the mask, in the case of n-channel element, for example, the B<+> ion is implanted in order to form a high concentration layer 5 and the photo resist 4 is removed. After the cleaning and dehydration, a LOCOS oxide film 7 is formed, for example, through the heat treatment under the steamy ambient. After etching a very thin oxide film formed by the growth method on the silicon nitride film 3 used as the mask for oxidation while the LOCOS film 7 is formed with the aqueous solution of fluoric acid, the silicon nitride film 3 is etched by the hot phosphoric acid and thereafter a protection oxide film 2 is etched by the aqueous solution of fluoric acid.

Inventors

• 👤 Shuichi Mayumi
• 👤 周一 真弓
• 👤 Jun Fukuchi
• 👤 福地　順
• 👤 Akira Sano
• 👤 彰 佐野

Bibliographic Details